sfh 7221 gaalas-ir-lumineszenzdiode (880 nm) und si-fototransistor gaalas-infrared-emitter (880 nm) and si-phototransistor lead (pb) free produc t - rohs compliant 2009-03-05 1 wesentliche merkmale ? smt-geh?use mit ir-sender (880 nm) und si-fototransistor ? geeignet fr smt-bestckung ? gegurtet lieferbar ? sender und empf?nger getrennt ansteuerbar anwendungen ? datenbertragung ? wegfahrsperre ? infrarotschnittstelle typ type bestellnummer ordering code geh?use package sfh 7221 Q65110A2741 smt multi topled ? features ? smt package with ir emitter (880 nm) and si-phototransistor ? suitable for smt assembly ? available on tape and reel ? emitter und detector can be controlled separately applications ? data transmission ? lock bar ? infrared interface
2009-03-05 2 sfh 7221 hinweis / notes die angegebenen grenzdaten gelten fr einen chip. the stated maximum ratings refer to one chip. grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit ired transistor betriebstemperatur operating temperature range t op ? 40 ... + 100 ? 40 ... + 100 c lagertemperatur storage temperature range t stg ? 40 ... + 100 ? 40 ... + 100 c sperrschichttemperatur junction temperature t j + 100 + 100 c durchlassstrom (led) forward current (led) i f 100 ? ma kollektorstrom (transistor) collector curren t (transistor) i c ? 15 ma sto?strom surge current t 10 s, d = 0.005 i fm 2500 75 ma sperrspannung (led) reverse voltage (led) v r 5 ? v kollektor-emitter spannung (transistor) collector-emitter voltage (transistor) v ce ? 35 v verlustleistung total power dissipation p tot 180 165 mw w?rmewiderstand sperrschicht / umgebung thermal resistance junction / ambient montage auf pc-board 1) (padgr??e 16 mm 2 ) mounting on pcb 1) (pad size 16 mm 2 ) sperrschicht / l?tstelle junction / soldering joint r th ja r th js 500 400 450 ? k/w k/w 1) pc-board: g30/fr4
sfh 7221 2009-03-05 3 kennwerte ired ( t a = 25 c) characteristics ired bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength of radiation i f = 100 ma, t p = 20 ms peak 880 nm spektrale bandbreite bei 50% von i max , i f = 100 ma spectral bandwidth at 50% of i max , i f = 100 ma ? 80 nm abstrahlwinkel viewing angle ? 60 grad deg. aktive chipfl?che active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che dimensions of active chip area l b l w 0.3 0.3 mm2 schaltzeiten, i e von 10% auf 90% und von 90% auf 10% switching times, i e from 10% to 90 % and from 90% to 10% i f = 100 ma, r l = 50 t r , t f 0.5 s kapazit?t capacitance v r = 0 v, f = 1 mhz c o 15 pf durchlassspannung forward voltage i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f v f 1.5 ( 1.8) 3.0 ( 3.8) v v sperrstrom reverse current v r = 5 v i r 0.01 ( 1 ) a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e 23 mw temperaturkoeffizient von i e bzw. e temperature coefficient of i e bzw. e i f = 100 ma, i f = 100 ma tc i ? 0.5 %/k
2009-03-05 4 sfh 7221 ired radiation characteristics i rel = f ( ? ) phototransistor direct ional characteristics s rel = f ( ? ) temperaturkoeffizient von v f temperature coefficient of v f i f = 100 ma tc v ? 2 mv/k temperaturkoeffizient von temperature coefficient of i f = 100 ma tc + 0.25 nm/k strahlst?rke i e in achsrichtung gemessen bei einem raumwinkel = 0.01 sr radiant intensity i e in axial direction at a solid angle of = 0.01 sr bezeichnung parameter symbol symbol werte values einheit unit strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e > 4 mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ. 48 mw/sr kennwerte ired ( t a = 25 c) characteristics ired (cont?d) bezeichnung parameter symbol symbol wert value einheit unit 0 0.2 0.4 1.0 0.8 0.6 ? 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
sfh 7221 2009-03-05 5 kennwerte fototransistor ( t a = 25 c, = 880 nm) characteristics phototransistor bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max 990 nm spektraler bereich der fotoempfindlichkeit s = 10% von s max spectral range of sensitivity s = 10% of s max 440 1150 nm bestrahlungsempfindliche fl?che (? 240 m) radiant sensitive area (? 240 m) a 0.038 mm 2 abmessung der chipfl?che dimensions of chip area l b 0.45 0.45 mm mm abstand chipoberfl?che zu geh?useoberfl?che distance chip front to case surface h 0.5 0.7 mm halbwinkel half angle ? 60 grad deg. kapazit?t capacitance v ce = 0 v, f = 1 mhz, e = 0 c ce 5.0 pf dunkelstrom dark current v ce = 25 v, e = 0 i ceo 1 ( 200) na fotostrom photocurrent e e = 0.1 mw/cm 2 , v ce = 5 v i pce 16 a anstiegszeit/abfallzeit rise time/fall time i c = 1 ma, v cc = 5 v, r l = 1 k t r , t f 7 s kollektor-emitter-s?ttigungsspannung collector-emitter saturation voltage i c = 5 a, e e = 0.1 mw/cm 2 v cesat 150 mv
sfh 7221 2009-03-05 6 ired forward current i f = f ( v f ) t a = 25 c max. permissible forward current i f = f ( t a ) 10 ohr00881 f v -3 -2 10 -1 10 0 10 1 10 0123456v8 a f ohr00883 0 f 0 20 40 60 80 100 120 20 40 60 80 100 120 ma ?c t a r thja = 450 k/w rel luminous intensity i v / i v (10 ma) = f ( i f ), t a = 25 c relative spectral emission i rel = f ( ) 10 ohr00878 e f -3 -2 10 -1 10 0 10 1 10 2 10 0 10 10 1 10 2 10 4 ma e (100ma) 3 10 0 750 rel ohr00877 800 850 900 950 nm 1000 20 40 60 80 % 100 perm. pulse handling capability i f = f ( t p ), duty cycle d = parameter, t a = 25 c perm. pulse handling capability i f = f ( t p ), duty cycle d = parameter, t a = 85 c 10 f ohr00886 1 2 10 3 10 4 10 ma -5 10 s = d f t dc 0.005 = d p t t t p p t 0.5 0.2 0.1 0.01 0.02 0.05 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 10 -2 -3 -4 -5 10 10 10 f i p t = d t 2 1 0 -1 10 t p 10 s 10 ohf02621 t t p i f 0.02 0.05 0.1 d = 0.005 0.01 1 10 10 2 10 3 10 4 ma 0.5 1 0.2
sfh 7221 2009-03-05 7 phototransistor rel. spectral sensitivity s rel = f ( ) total power dissipation p tot = f ( t a ) dark current i ceo = f ( t a ), v ce = 5 v, e = 0 0 ohf00207 400 s rel nm % 500 600 700 800 900 1100 10 20 30 40 50 60 70 80 100 ohf00871 tot p 0 0 40 80 120 160 mw 200 20 40 60 80 ?c 100 t a t ohf01530 a ceo -1 10 10 0 10 1 10 2 10 3 -25 na 0 25 50 75 100 ?c photocurrent i pce = f ( v ce ), e e = parameter capacitance c ce = f ( v ce ), f = 1 mhz, e = 0 photocurrent i pce = f ( e e ), v ce = 5 v v ohf01529 ce pce 0 0 10 10 -2 10 -1 ma v 5 10 15 20 25 30 35 mw cm 2 0.1 0.25 2 cm mw 0.5 2 cm mw 1 2 cm mw v ohf01528 ce -2 10 ce c 10 -1 10 0 10 1 10 2 0 v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pf e ohf00312 e pce 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 w/cm 2 m a dark current i ceo = f ( v ce ), e = 0 photocurrent i pce / i pce25 = f ( t a ), v ce = 5 v v ohf01527 ce ceo -3 10 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 v na t ohf01524 a 0 -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 pce pce 25 c
2009-03-05 8 sfh 7221 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). empfohlenes l?tpaddesign reflow l?ten recommended solder pad reflow soldering gply6965 c c e a 3 2 4 1 0.4 (0.016) 0.6 (0.024) 0.18 (0.007) 0.12 (0.005) 0.1 (0.004) typ 0.5 (0.020) 1.1 (0.043) 3.7 (0.146) 3.3 (0.130) 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.6 (0.024) 0.8 (0.031) 2.3 (0.091) 2.1 (0.083) 2.6 (0.102) 3.0 (0.118) 3.0 (0.118) 3.4 (0.134) (2.4 (0.094)) package marking ohlpy439 padgeometrie fr verbesserte w?rmeableitung improved heat dissipation paddesign for l?tstoplack solder resist 1.1 (0.043) 4.5 (0.177) 1.5 (0.059) 2.6 (0.102) 3.3 (0.130) 0.5 (0.020) 7.5 (0.295) 0.4 (0.016) cathode marking kathoden markierung / cu fl?che / 12 mm per pad 2 cu-area _ < 3.3 (0.130)
sfh 7221 2009-03-05 9 l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 reflow l?tprofil fr bleifreies l?ten (nach j-std-020c) reflow soldering profile for lead free soldering (acc. to j-std-020c ) published by osram opto semiconductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohla0687 0 0 t t ?c s 120 s max 50 100 150 200 250 300 ramp up 100 s max 50 100 150 200 250 300 ramp down 6 k/s (max) 3 k/s (max) 25 ?c 30 s max 260 ?c +0 ?c -5 ?c 245 ?c 5 ?c 240 ?c 255 ?c 217 ?c maximum solder profile recommended solder profile 235 ?c -0 ?c +5 ?c minimum solder profile 10 s min
mouser electronics related product links 720-sfh7221-z - osram opto semiconductor sfh 7221-z
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